10Gbps APD Chip For XG-PON OLT- OS-APD1030
Features
Data rates up to 10Gbps
High Responsivity
Low Capacitance
Low Dark Current
Top Illuminated planar structure
Application
XG-PON OLT
Optical Ethernet
Specification (Tc=25℃)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT | TEST CONDITIONS |
Active area diameter | D | 30 | μm | |||
Response range | λ | 900 | 1650 | nm | ||
Breakdown Voltage | VBR | 30 | V | Id=10uA | ||
Responsivity | R | 0.75 | A/W | M=1 | ||
Temperature coefficient of VBR | 0.05 | V/℃ | ||||
Dark current | ID | 30.0 | nA | VR=0.9*VBR | ||
Capacitance | C | 0.10 | 0.13 | pF | VR=0.9*VBR | |
Bandwidth | Bw | 7.5 | GHz | |||
Bond Pad Diameter | 65 | μm | ||||
Die size | 220X220 | μm | ||||
產品應用覆蓋光接入網、5G無線通信、光傳輸網、數據中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領域，并可提供不同響應波長的各種大面積光探測器芯片及一維和二維光探測器陣列芯片等定制服務。
——產品應用覆蓋光接入網、5G無線通信、光傳輸網、數據中心、微波光子、量子通信、屏下傳感、HDMI、氣體傳感、紅外成像、激光雷達等領域，并可提供不同響應波長的各種大面積光探測器芯片及一維和二維光探測器陣列
